PART |
Description |
Maker |
86105-0000 86105-2200 86105-2100 86105-2300 86105- |
HBMTTM MT High Density Backplane Interconnect System
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Molex Electronics Ltd.
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ISPLSI2064VL-100LB100 ISPLSI2064VL-100LJ44 ISPLSI2 |
2.5V In-System Programmable SuperFAST?High Density PLD 2.5V In-System Programmable SuperFAST?/a> High Density PLD 2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD Turns Counting Dial; Number of Turns:10; Knob/Dial Style:Round Skirted With Indicator Line; Body Material:Aluminum; Shaft Size:1/4; Color:Satin RoHS Compliant: Yes EE PLD, 10 ns, PQFP100 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP100 2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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CBRLDSH2-40 CBRLDSH2-40-15 |
SURFACE MOUNT HIGH DENSITY HIGH DENSITY SCHOTTKY BRIDGE RECTIFIER
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Central Semiconductor C...
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ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes In-System Programmable High Density PLD 100 MHz in-system prommable high density PLD
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Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
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ISPLSI2032VL ISPLSI2032VL-110LB49 ISPLSI2032VL-110 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD 2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP48 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP44 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQCC44 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQFP44
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V,温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流 High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V,温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器) High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V,温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器) 0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V,温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度,高电压,标准恢复倍流整流(反向电5000V,温25℃时平均整流电流0.4A,高密度,高电压,标准恢复倍增整流器)
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Semtech Corporation Semtech, Corp.
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SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存??? 5.5 A, 16000 V, SILICON, RECTIFIER DIODE High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V,温5℃时平均整流电流5.5A,高压,大电流,高密度,标准恢复整流 STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
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Semtech Corporation
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ISPLSI5512VA-100LB272 ISPLSI5512VA-70LQ208 5512VA |
70 MHz in-system prommable 3.3V superWIDE high density PLD In-System Programmable 3.3V SuperWIDE⑩ High Density PLD In-System Programmable 3.3V SuperWIDE High Density PLD 110 MHz in-system prommable 3.3V superWIDE high density PLD
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LATTICE[Lattice Semiconductor]
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STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
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STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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ISPLSI2032VE06 ISPLSI2032VE300LB49 ISPLSI2032VE300 |
3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST PLD 3.3V In-System Programmable High Density SuperFAST垄芒 PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST?PLD
|
Lattice Semiconductor
|
ISPLSI2192VL-100LB144 ISPLSI2192VL-100LT128 ISPLSI |
2.5V In-System Programmable SuperFAST High Density PLD TRIAC STANDARD 12A 400V TO-220AB 2.5V In-System Programmable SuperFASTHigh Density PLD
|
Lattice Semiconductor Corporation
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ISPLSI5256VE-125LT100I ISPLSI5256VE-100LF256I ISPL |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. EE PLD, 10 ns, PBGA256 In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns.
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Lattice Semiconductor, Corp. LATTICE SEMICONDUCTOR CORP
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